Works citing this work

3 works

Work: Semiconductor lasers with internal wavelength selection

1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   ArticleIon-surface interactions and analysisTechnical Physics201513 citations

   ABIABI:AkademIndex/openalex/2026.other.095299

2. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

   Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

   ArticlePhotocathodes and Microchannel PlatesTechnical Physics20198 citations

   ABIABI:AkademIndex/openalex/2026.other.232443

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   ArticleSemiconductor materials and interfacesTechnical Physics Letters20210 citations

   ABIABI:AkademIndex/openalex/2021.article.004233