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2 works

Work: Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

  1. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    ArticleChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 citations
    ABI

  2. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 citations
    ABI