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Works cited by this work

25 works

Work: Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Book200258 citations
    ABI

  2. The physics of semiconductor devices

    H. L. Grubin

    Article197918 citations
    ABI

  3. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    ArticleQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 citations
    ABI

  4. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    ArticlePhotonic and Optical DevicesSemiconductors20124 citations
    ABI

  5. ZnS nanostructures: From synthesis to applications

    Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam +4

    Article20103 citations
    ABI

  6. GaP-nucleation on exact Si (001) substrates for III/V device integration

    Kerstin Volz, Andreas Beyer, Wiebke Witte +4

    Article20102 citations
    ABI

  7. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    ArticleSemiconductor materials and interfacesApplied Solar Energy20162 citations
    ABI

  8. Electron energies and states at the deep impurity level in a semiconductor

    A. G. Mironov, Alexander S. Serov

    Article20112 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
    ABI

  17. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20131 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
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    Other1 citations
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    Other1 citations
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  22. Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

    D. V. Saparov, М. С. Саидов, А. С. Саидов

    ArticleSemiconductor materials and interfacesApplied Solar Energy20161 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI