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Works cited by this work

17 works

Work: Influence of Defects on Low Temperature Diffusion of Boron in SiC

  1. Investigation of boron diffusion in 6H-SiC

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan

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  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

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  3. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

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  4. Oxidation kinetics of hot-pressed silicon carbide

    Subhash C. Singhal

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  5. Diffusion of boron in silicon carbide

    K. Rüschenschmidt, H. Bracht, Michael Laube +2

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  6. Vacancy defects in silicon carbide

    O. Girka, E. N. Mokhov

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  7. Untitled

    Other3 citations
    ABI

  8. Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

    Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama

    Article20092 citations
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  9. Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

    P. G. Baranov, I. V. Il’in, E. N. Mokhov

    Article19982 citations
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  10. Untitled

    Other1 citations
    ABI

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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
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    Other1 citations
    ABI