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Works cited by this work

6 works

Work: Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleMaterial Science and ThermodynamicsSemiconductors200913 citations
    ABI

  3. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 citations
    ABI

  4. Optical Energy Gap of the Mixed Crystal CdS<sub><i>x</i></sub>Te<sub>1-<i>x</i></sub>

    Keiichi Ohata, Junji Saraie, Tetsuro Tanaka

    Article197310 citations
    ABI

  5. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    ArticleThermography and Photoacoustic TechniquesInorganic Materials20149 citations
    ABI

  6. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticlePhase-change materials and chalcogenidesApplied Solar Energy20198 citations
    ABI