M. Tuichiev

Работ: 3

S. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1983Цитирований: 2

   ABIABI:AkademIndex/openalex/1983.article.000065

2. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1983Цитирований: 1

   ABIABI:AkademIndex/openalex/1983.article.000076

3. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   СтатьяSurface and Thin Film Phenomenaphysica status solidi (a)1984Цитирований: 0

   ABIABI:AkademIndex/openalex/1984.article.000100