Rositza Yakimova

Работ: 3

Linköping University

1. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000098

2. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

   Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000282

3. Carrier Removal in Electron Irradiated 4H and 6H SiC

   M. Mikelsen, Ulrike Großner, J. H. Bleka +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000120