R. M. Erkulov

Работ: 4

Institute of Ion–Plasma and Laser Technologies, 100125, Tashkent, Uzbekistan

1. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

   З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

   СтатьяSemiconductor materials and interfacesTechnical Physics2020Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.365534

2. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

   Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

   СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.492991

3. Influence of oxygen ion implantation on composition and structure of free nanofilm Si/Cu system

   З. А. Исаханов, М. К. Рузибаева, Sh.I. Khamrokulov +3

   СтатьяAdvanced Surface Polishing Techniques2019Цитирований: 0

   ABIABI:AkademIndex/openalex/2019.article.002075

4. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004233