Shahriyor B. Norkulov

Работ: 4

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001723

2. Defective Structure of Silicon Doped with Dysprosium

   Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev +3

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.412289

3. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.432368

4. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009030