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Journal of Applied Physics

Работ: 32

Журнал · ISSN 0021-8979

  1. Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates

    Sh. U. Yuldashev, Igor L. Bolotin, Y. B. Hou +4

    СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Applied Physics1999Цитирований: 0
    ABI

  2. Optical and electrical properties of opal carbon replica and effect of pyrolysis

    Hirotake Kajii, Y. Kawagishi, Hiroyoshi Take +3

    СтатьяPhotonic Crystals and ApplicationsJournal of Applied Physics2000Цитирований: 0
    ABI

  3. Energy levels of Dy3+(4f 9) in orthoaluminate crystals

    John B. Gruber, Bahram Zandi, U. V. Valiev +1

    СтатьяLuminescence Properties of Advanced MaterialsJournal of Applied Physics2003Цитирований: 0
    ABI

  4. Photochromism and polaronic photocharge localization in diluted KTa1−xNbxO3

    A. I. Gubaev, S. Kapphan, L. Jastrabı́k +2

    СтатьяPhotorefractive and Nonlinear OpticsJournal of Applied Physics2006Цитирований: 0
    ABI

  5. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

    M. Maryško, J. Hejtmánek, V. V. Laguta +9

    СтатьяZnO doping and propertiesJournal of Applied Physics2015Цитирований: 0
    ABI

  6. Crystal phase transformation controlling crack propagation and interaction between cracks: A molecular dynamics simulation in <i>α</i> -Fe

    Mohammad Nourbakhsh, Ali Pourkamali Anaraki, Javad Kadkhodapour +2

    СтатьяMicrostructure and mechanical propertiesJournal of Applied Physics2025Цитирований: 0
    ABI

  7. Collisionless magnetized rf sheath resonance heating in dual-frequency capacitively coupled plasmas

    Ming-Yue Han, Fang‐Fang Ma, H. J. Wen +4

    СтатьяPlasma Diagnostics and ApplicationsJournal of Applied Physics2025Цитирований: 0
    ABI