Работы, цитирующие эту работу

Работ: 3

Работа: Influence of ultrasound on ionic diffusion process in semiconductors

1. Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves

   B. N. Zaveryukhin, N. N. Zaveryukhina, Oybek Tursunkulov

   СтатьяMaterial Properties and ApplicationsTechnical Physics Letters2002Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.386090

2. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

   E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2005Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.215223

3. Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range

   N. N. Zaveryukhina, E. B. Zaveryukhina, B. N. Zaveryukhin

   СтатьяThermography and Photoacoustic TechniquesTechnical Physics Letters2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000206