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Работы, на которые ссылается эта работа
Работ: 15
Работа: Anisotropy of magnetoresistance in Be Co-doped GaMnAs
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
T. Dietl, Hideo Ohno, F. Matsukura +2
Статья2000Цитирований: 16ABISpin disorder scattering mechanism of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates
Im Taek Yoon, Tae Won Kang, K. H. Kim +1
Статья2004Цитирований: 7ABIHole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
T. Dietl, Hideo Ohno, F. Matsukura
Статья2001Цитирований: 6ABIMetal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors
Y. Iye, A. Oiwa, Akira Endo +5
Статья1999Цитирований: 4ABIHall effect and hole densities in Ga1−xMnxAs
K. W. Edmonds, K. Y. Wang, R. P. Campion +4
Статья2002Цитирований: 3ABIMagnetotransport study of temperature dependent magnetic anisotropy in a (Ga,Mn)As epilayer
Kohei Hamaya, Tomoyasu Taniyama, Y. Kitamoto +2
Статья2003Цитирований: 3ABIEffect of Be doping on the properties of GaMnAs ferromagnetic semiconductors
Sang‐Hoon Lee, S. J. Chung, I. S. Choi +8
Статья2003Цитирований: 3ABISpatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE
Koji Onomitsu, Hideo Fukui, Takashi Maeda +2
Статья2005Цитирований: 2ABISpintronics and spintronics materials
В.А. Иванов, Т. Г. Аминов, Vladimir M. Novotortsev +1
Статья2004Цитирований: 2ABIAnisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films
Kai Wang, K. W. Edmonds, R. P. Campion +3
Статья2005Цитирований: 2ABI