Работы, на которые ссылается эта работа

Работ: 8

Работа: Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation
Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1
СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 19
ABI
Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation
Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 16
ABI
Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods
Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3
СтатьяMetal and Thin Film MechanicsTechnical Physics2013Цитирований: 15
ABI
Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation
S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова
СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13
ABI
Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys
П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3
Статья2013Цитирований: 6
ABI
Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier
S. A. Masalov, A. V. Korotchenkov, V. P. Evtikhiev +1
Статья2015Цитирований: 2
ABI
Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
С. В. Тихов, О. Н. Горшков, M. N. Koryazhkina +2
Статья2016Цитирований: 2
ABI
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ДругоеЦитирований: 1
ABI