Работы, на которые ссылается эта работа

Работ: 4

Работа: Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

   S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

   СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20

   ABIABI:AkademIndex/openalex/2014.article.000062

2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

   Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

   СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14

   ABIABI:AkademIndex/openalex/2003.article.000028

3. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

   Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 14

   ABIABI:AkademIndex/openalex/2026.other.196457

4. Transition layer formation simulation during film deposition by an ion-molecular beam

   T.S. Pugacheva

   СтатьяIon-surface interactions and analysisRadiation Effects1987Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.503216