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A.K. UteniyazovKarakalpak State University, Nukus, UzbekistanA. Yu. LeydermanPhysical-Technical Institute SPA "Physics-Sun" named after S.A. Azimov, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanR. A. AyukhanovPhysical-Technical Institute SPA "Physics-Sun" named after S.A. Azimov, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanE.S. EsenbaevaNukus branch of the Tashkent University of Information Technology, Nukus, UzbekistanM. V. GafurovaAcademy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanMirsagatov ShA UteniyazovKarakalpak State University, Nukus, UzbekistanA AchilovAR KabulovM MakhmudovB ZaveryukhinO AtaboevN ZaveryukhinaNazarov ZhK IsmailovS MuzafarovaM BaievM KalanovV RustamovA LeydermanPhysical-Technical Institute SPA "Physics-Sun" named after S.A. Azimov, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanYuM MinbaevaM KhashaevE AdirovichP Karageorgiy-AlkalaevV BaranyukV Makhniy
ABI
Аннотация
The results of studies of the current-voltage characteristics of the Al-Al2O3-p-CdTe-Mo structure in the forward direction of the current in the dark and under light illumination have been presented.These characteristics have four sections of the power-law dependence of the current on the voltage in the form J V α .It has been shown that the Al-Al2O3-p-CdTe-Mo structure can be considered as a n + -p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.
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