Работы, цитирующие эту работу

Работ: 1

Работа: Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

1. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   A.S. Saidov, Shukrullo Usmonov, D. V. Saparov +4

   СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009139