Работы, на которые ссылается эта работа

Работ: 4

Работа: Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

   А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

   СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9

   ABIABI:AkademIndex/openalex/2021.article.000597

2. Без названия

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   ABIABI:AkademIndex/openalex/2026.other.128152

3. Perspective Material for Photoenergetics on the Basis of Silicon with Binary Elementary Cells

   М. К. Бахадырханов, U. X. Sodikov, Х. М. Илиев +2

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   ABIABI:AkademIndex/openalex/2026.other.380262

4. Detailed analysis of thin phosphorus-diffused layers in p-type silicon

   Eileen Tannenbaum

   Статья1961Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.639134