Работы, цитирующие эту работу

Работ: 4

Работа: PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

1. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   СтатьяAdvanced Materials Characterization TechniquesAdvanced Physical Research2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001560

2. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   СтатьяGas Sensing Nanomaterials and SensorsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002166

3. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   СтатьяSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010369

4. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   СтатьяSilicon and Solar Cell TechnologiesJournal of Ovonic Research2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.010786