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Работы, на которые ссылается эта работа

Работ: 46

Работа: Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

  1. The missing memristor found

    Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart +1

    Статья2008Цитирований: 11
    ABI

  2. Dielectric and magnetic properties of (Zn, Co) co-doped SnO <sub>2</sub> nanoparticles

    Khan Rajwali, Minghu Fang

    Статья2015Цитирований: 9
    ABI

  3. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    СтатьяAdvanced Memory and Neural ComputingNanoscale2022Цитирований: 8
    ABI

  4. The structural and dilute magnetic properties of (Co, Li) co-doped-ZnO semiconductor nanoparticles

    Sattam Al Otaibi, Mohammad Ilyas Khan, Mohammed Khaloufa Almesfer +7

    Статья2022Цитирований: 7
    ABI

  5. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6
    ABI

  6. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

    Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

    СтатьяAdvanced Memory and Neural ComputingRSC Advances2023Цитирований: 6
    ABI

  7. Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

    Valentina Cappello, Laura Marchetti, Paola Parlanti +5

    Статья2016Цитирований: 6
    ABI

  8. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

    Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah +8

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 4
    ABI

  9. Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

    Wuhong Xue, Wei Xiao, Jie Shang +10

    Статья2014Цитирований: 3
    ABI

  10. Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices

    Aize Hao, Shuai He, Ni Qin +2

    Статья2017Цитирований: 3
    ABI

  11. Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

    Qi Liu, Jun Sun, Hangbing Lv +6

    Статья2012Цитирований: 3
    ABI

  12. Magnetic properties of Fe doped, Co doped, and Fe+Co co-doped ZnO

    J. J. Beltrán, J. Osorio, C. A. Barrero +2

    Статья2013Цитирований: 3
    ABI

  13. A review of emerging non-volatile memory (NVM) technologies and applications

    An Chen

    Обзорная статья2016Цитирований: 3
    ABI

  14. Memristor with Ag‐Cluster‐Doped TiO<sub>2</sub> Films as Artificial Synapse for Neuroinspired Computing

    Xiaobing Yan, Jianhui Zhao, Sen Liu +4

    Статья2017Цитирований: 3
    ABI

  15. Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

    Tuo Shi, Rui Yang, Xin Guo

    Статья2016Цитирований: 2
    ABI

  16. Effect of (Li, Mn) co-doping on structural, optical and magnetic properties of chunk-shaped nano ZnO

    N. Rajamanickam, R. N. Mariammal, S. Rajashabala +1

    Статья2014Цитирований: 2
    ABI

  17. ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

    Usman Isyaku Bature, Mohd Haris Md Khir, I. Md Nawi +2

    Статья2021Цитирований: 2
    ABI

  18. Bipolar resistive switching behaviors in Cr-doped ZnO films

    Ding Lin Xu, Ying Xiong, Ming Hua Tang +6

    Статья2013Цитирований: 2
    ABI

  19. Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

    Yang-Shun Fan, Po‐Tsun Liu, Ching-Hui Hsu

    Статья2013Цитирований: 2
    ABI

  20. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

    Feng Miao, John Paul Strachan, J. Joshua Yang +7

    Статья2011Цитирований: 2
    ABI

  21. Runx1 Determines Nociceptive Sensory Neuron Phenotype and Is Required for Thermal and Neuropathic Pain

    Chih-Li Chen, Daniel C. Broom, Yang Liu +7

    Статья2006Цитирований: 2
    ABI

  22. Future Directions and Challenges for ETox Flash Memory Scaling

    G. Atwood

    Статья2004Цитирований: 2
    ABI

  23. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    Yi-Jen Huang, Shih-Chun Chao, Der‐Hsien Lien +3

    Статья2016Цитирований: 2
    ABI

  24. Ultra-Low Switching Voltage Induced by Inserting SiO<sub>2</sub>Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

    Chih‐Cheng Shih, Wen‐Jen Chen, Kuan‐Chang Chang +12

    Статья2016Цитирований: 2
    ABI

  25. A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

    Mohammed Zackriya, Harish M. Kittur, Albert Chin

    Статья2017Цитирований: 2
    ABI