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Работы, на которые ссылается эта работа

Работ: 17

Работа: Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Книга2006Цитирований: 33
    ABI

  2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
    ABI

  3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Статья2024Цитирований: 13
    ABI

  4. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Статья2012Цитирований: 11
    ABI

  5. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Статья2016Цитирований: 11
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Статья2013Цитирований: 10
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Статья2019Цитирований: 10
    ABI

  8. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Статья2011Цитирований: 9
    ABI

  9. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Статья2011Цитирований: 9
    ABI

  10. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    Статья2019Цитирований: 8
    ABI

  11. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    Статья2014Цитирований: 7
    ABI

  12. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Статья2015Цитирований: 7
    ABI

  13. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    Статья2015Цитирований: 6
    ABI

  14. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Статья2011Цитирований: 6
    ABI

  15. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Статья2019Цитирований: 6
    ABI

  16. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Статья2021Цитирований: 6
    ABI

  17. Si microwire-array solar cells

    Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6

    Статья2010Цитирований: 5
    ABI