Работы, цитирующие эту работу

Работ: 2

Работа: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000556

2. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.002954