Работы, цитирующие эту работу

Работ: 4

Работа: Metal–Oxide RRAM

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

   Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

   СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.000136

3. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

   А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

   СтатьяAdvanced Memory and Neural Computing2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011219

4. 2D MoTe₂ memristors for energy-efficient artificial synapses and neuromorphic applications

   Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

   Обзорная статьяAdvanced Memory and Neural ComputingNanoscale2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.review-article.000035