Работы, цитирующие эту работу

Работ: 3

Работа: Modification of semiconductors with proton beams. A review

1. X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons

   Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.241691

2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000005

3. Positron annihilation on defects in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

   СтатьяMuon and positron interactions and applicationsJournal of Physics Condensed Matter2012Цитирований: 1

   ABIABI:AkademIndex/openalex/2012.article.000064