Работы, цитирующие эту работу

Работ: 2

Работа: Properties of zinc oxide films synthesized in low-temperature plasma discharge under conditions of bombardment with plasma components

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   Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21

   ABIABI:AkademIndex/openalex/2026.other.104961

2. Change in characteristics of the band structure of oxide materials at high temperatures

   I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov

   СтатьяSemiconductor materials and devicesHigh Temperature2016Цитирований: 0

   ABIABI:AkademIndex/openalex/2016.article.000689