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Работы, цитирующие эту работу

Работ: 9

Работа: Molecular Beam Epitaxy and Heterostructures

  1. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    СтатьяMetal and Thin Film MechanicsTechnical Physics2013Цитирований: 15
    ABI

  2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    СтатьяSemiconductor materials and interfacesMaterials Science and Engineering B2003Цитирований: 14
    ABI

  3. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13
    ABI

  4. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    СтатьяQuantum and electron transport phenomenaJournal of Computational Electronics2024Цитирований: 1
    ABI

  5. Effects of Band Nonparabolicity on the Resonance Peaks of the Single-Particle Entropy of a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, Mahmudjon Tohirjonov +3

    СтатьяQuantum and electron transport phenomenaInternational Journal of Theoretical Physics2024Цитирований: 1
    ABI

  6. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    СтатьяQuantum and electron transport phenomenaActa Physica Polonica A2025Цитирований: 1
    ABI

  7. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0
    ABI

  8. Analysis of the Influence of Formation of Pd Silicides on Surface Layers of Si on the Diffusion of Atoms of Contacting Metal

    Д. А. Ташмухамедова, Kh.E. Abdiev, Soadat Gulyamova +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
    ABI

  9. Study of The Process of Formation of Heterostructural Nanofilms MexSiy/Si and GaxMe1-xAs/GaAs by Ion Implantation

    Eshboboyev Sardor Nurbobo Ugli, Tashatov Allanazar Karshievich

    СтатьяIon-surface interactions and analysisJournal of Physical Science2025Цитирований: 0
    ABI