Работы, цитирующие эту работу

Работ: 2

Работа: Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

   M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17

   ABIABI:AkademIndex/openalex/2021.article.000283

2. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

   Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

   СтатьяX-ray Diffraction in CrystallographyJournal of Crystal Growth2024Цитирований: 8

   ABIABI:AkademIndex/openalex/2024.article.000891