Работы, цитирующие эту работу

Работ: 6

Работа: Theory of the Junctionless Nanowire FET

1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14

   ABIABI:AkademIndex/openalex/2024.article.000600

2. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10

   ABIABI:AkademIndex/openalex/2024.article.000837

3. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000607

4. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

   Jo`shqin Abdullayev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000647

5. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

   ABIABI:AkademIndex/openalex/2025.article.000840

6. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5

   ABIABI:AkademIndex/openalex/2025.article.000841