Работы, цитирующие эту работу

Работ: 4

Работа: Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

1. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

   С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

   СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 7

   ABIABI:AkademIndex/openalex/2024.article.000639

2. X-Ray Structural and Photoelectric Properties of SnO2, ZnO, and Zn2SnO4 Metal Oxide Films

   Khotamjon J. Mansurov, Akramjon Y. Boboev, Jakhongir A. Urinboyev

   СтатьяZnO doping and propertiesEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.403504

3. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

   Akramjon Y. Boboev

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.467189

4. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

   С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008697