Работы, цитирующие эту работу

Работ: 2

Работа: Crystal growth of manganese silicide, MnSi?1.73 and semiconducting properties of Mn15Si26

1. Formation of thin Crsi ₂ films by the solid-phase ion-plasma method and their thermoelectric properties

   I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

   СтатьяAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations2024Цитирований: 9

   ABIABI:AkademIndex/openalex/2024.article.000742

2. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626