Работы, цитирующие эту работу

Работ: 5

Работа: Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

1. The The Gas-Sensitive Properties of Tin Dioxide Films

   Nuritdin Y. Yunusaliyev

   СтатьяGas Sensing Nanomaterials and SensorsEast European Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001151

2. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001723

3. Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3

   СтатьяIon-surface interactions and analysisEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001644

4. Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment

   Uchkun Kutliev, Atabek S. Ashirov, Gulmira X. Allayarova +1

   СтатьяIon-surface interactions and analysisEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009024

5. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009030