Работы, цитирующие эту работу

Работ: 3

Работа: Recent progress in CdTe and CdZnTe detectors

1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

   Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16

   ABIABI:AkademIndex/openalex/2026.other.200872

2. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

   Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.200865

3. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

   Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

   СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal2012Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.393704