Работы, цитирующие эту работу

Работ: 3

Работа: Photodetectors with a controllable photosensitivity spectrum

1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

   Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16

   ABIABI:AkademIndex/openalex/2026.other.200872

2. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

   Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

   СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.393702

3. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

   Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

   СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2014Цитирований: 3

   ABIABI:AkademIndex/openalex/2014.article.000132