Работы, цитирующие эту работу

Работ: 2

Работа: Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon

1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

   А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

   СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9

   ABIABI:AkademIndex/openalex/2021.article.000597

2. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

   СтатьяSilicon Nanostructures and PhotoluminescenceVacuum2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.008005