Работы, цитирующие эту работу

Работ: 4

Работа: Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6

   ABIABI:AkademIndex/openalex/2021.preprint.000003

2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5

   ABIABI:AkademIndex/openalex/2021.article.000827

3. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511885

4. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   СтатьяSemiconductor materials and devices2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001950