Работы, цитирующие эту работу

Работ: 3

Работа: Tuning of bandgaps and emission properties of light-emitting diode materials through homogeneous alloying in molecular crystals

1. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties

   А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

   СтатьяChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B2022Цитирований: 6

   ABIABI:AkademIndex/openalex/2022.article.000686

2. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

   А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

   СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2022.article.000903

3. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)_1-x-y(Ge2)_x(ZnSe)_y

   Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

   СтатьяPhase-change materials and chalcogenides2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007623