Работы, цитирующие эту работу

Работ: 3

Работа: Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductors

1. Properties of precisely compensated semiconductors

   Smagul Karazhanov

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000034

2. Electrical properties of semiconductors with pair defects

   Smagul Karazhanov, É. V. Kanaki

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000183

3. Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

   Smagul Karazhanov

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000268