Работы, цитирующие эту работу

Работ: 2

Работа: On several regularities of deep levels of d-impurities in silicon

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.279519

2. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.001522