Работы, цитирующие эту работу

Работ: 3

Работа: Excess Tunnel Current in Silicon Esaki Junctions

1. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.410284

2. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

   Paul R. Berger, G. Gulyamov, М. Г. Дадамирзаев +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignRomanian Journal of Physics2024Цитирований: 4

   ABIABI:AkademIndex/openalex/2024.article.001662

3. Behavior of excess currents in n-type gallium arsenide tunnel diodes

   A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1

   СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000120