Работы, цитирующие эту работу

Работ: 3

Работа: Preparation of manganese silicide thin films by solid phase reaction

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   СтатьяSemiconductor materials and interfaces2005Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.424565

2. On the growth of higher manganese silicide films on silicon

   Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.199251

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626