Работы, на которые ссылается эта работа

Работ: 12

Работа: About the mechanism of formation and growth of the higher manganese silicide films on silicon

CRC Handbook of Thermoelectrics
Книга2010Цитирований: 16
ABI
Thin Films—Interdiffusion and Reactions
J. M. Poate, K. N. Tu, Jean-Claude Mayor +1
Статья1979Цитирований: 5
ABI
The potential of higher manganese silicide as an optoelectronic thin film material
John E. Mahan
Статья2004Цитирований: 5
ABI
Structural observation of Mn silicide islands on Si(111) 7×7 surface with UHV-TEM
Q. Zhang, Masaki Takeguchi, Miyoko Tanaka +1
Статья2002Цитирований: 4
ABI
Silicide thin films and their applications in microelectronics
S. P. Murarka
Статья1995Цитирований: 3
ABI
Preparation of manganese silicide thin films by solid phase reaction
Jin‐Liang Wang, Masaaki Hirai, M. Kusaka +1
Статья1997Цитирований: 3
ABI
Growth of MnSi1.7 on Si(001) by MBE
S. Teichert, S Schwendler, D.K. Sarkar +5
Статья2001Цитирований: 3
ABI
Epitaxial growth of MnSi1.7 layers in the presence of an Sb flux
Yoshinaga Souno, Yoshihito Maeda, Hirokazu Tatsuoka +1
Статья2001Цитирований: 3
ABI
Morphology of ultrathin manganese silicide on Si(111)
Tadaaki Nagao, Satoru Ohuchi, Yasuyuki Matsuoka +1
Статья1999Цитирований: 2
ABI
Thermoelectric properties of manganese silicide films
Qiang Hou, Z.M. Wang, Y. J. HE
Статья2004Цитирований: 2
ABI
Semiconducting Silicides
В. Е. Борисенко
Книга2000Цитирований: 2
ABI
Growth technique and structural properties of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3
СтатьяSemiconductor materials and interfaces2005Цитирований: 1
ABI