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Работа: Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)<sub>1−x</sub>(ZnO)<sub>x</sub>solid solution
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СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1ABIStructural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt
А. С. Саидов, M. U. Kalanov, D. V. Saparov +4
СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0ABI