Работы, цитирующие эту работу

Работ: 4

Работа: Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

1. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.439504

2. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

   A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

   Статья2D Materials and Applications2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.001865

3. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

   Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignPreprints.org2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000052

4. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002170