Работы, цитирующие эту работу

Работ: 4

Работа: RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

1. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

   Kh. M. Madaminov

   СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002068

2. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

   Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002404

3. Study of a solar cell with a silicon-based photodiode structure

   Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

   СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.467177

4. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

   Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

   СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.467178