Работы, цитирующие эту работу

Работ: 2

Работа: Thin silicide films: producing and properties

1. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.095294

2. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

   Gunel Imanova, I. R. Bekpulatov

   СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002486