Работы, цитирующие эту работу

Работ: 4

Работа: Study of properties of tellurium-doped indium phosphide as photoconversion material

1. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.278129

2. Characterization of CdTe and CdS Films for Photoresistors

   T.M. Razykov, A. Bosio, N. Romeo +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000618

3. Study of GaSb doped with Te as a material for photovoltaic systems

   A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

   СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2015Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.499307

4. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

   А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012611