Работы, цитирующие эту работу

Работ: 3

Работа: Transition layer formation simulation during film deposition by an ion-molecular beam

1. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

   Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5

   ABIABI:AkademIndex/openalex/2018.article.000274

2. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

   T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

   СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.488710

3. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

   S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

   СтатьяSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.488712