Работы, цитирующие эту работу

Работ: 2

Работа: Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

1. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.439504

2. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

   M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009026