Работы, цитирующие эту работу

Работ: 2

Работа: Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.402217

2. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.007102