Работы, цитирующие эту работу

Работ: 2

Работа: Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400