Работы, цитирующие эту работу

Работ: 2

Работа: Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

1. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

   Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002748

2. On how Doping with Atoms of Gadolinium and Scandium affects the Surface Structure of Silicon

   BE Egamberdiev, Schaller Kh, Kh Khamidjonov +2

   СтатьяSemiconductor materials and interfacesIgMin Research2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007193